? 2000 ixys all rights reserved 1 - 2 features international standard package planar passivated chips very short recovery time extremely low switching losses low i rm -values soft recovery behaviour epoxy meets ul 94v-0 applications antiparallel diode for high frequency switching devices antisaturation diode snubber diode free wheeling diode in converters and motor control circuits rectifiers in switch mode power supplies (smps) inductive heating uninterruptible power supplies (ups) ultrasonic cleaners and welders advantages avalanche voltage rated for reliable operation soft reverse recovery for low emi/rfi low i rm reduces: - power dissipation within the diode - turn-on loss in the commutating switch dimensions see outlines.pdf hiperfred tm epitaxial diode with common cathode and soft recovery a = anode, c = cathode, tab = cathode to-247 ad c a a a c a c (tab) pulse test: pulse width = 5 ms, duty cycle < 2.0 % pulse width = 300 s, duty cycle < 2.0 % data according to iec 60747 and per diode unless otherwise specified ixys reserves the right to change limits, test conditions and dimensions. dsec 30-12a i fav = 2x 15 a v rrm = 1200 v t rr = 40 ns v rsm v rrm type v v 1200 1200 dsec 30-12a symbol conditions maximum ratings i frms 50 a i favm t c = 125c; rectangular, d = 0.5 15 a i fsm t vj = 45c; t p = 10 ms (50 hz), sine 90 a e as t vj = 25c; non-repetitive 8.7 mj i as = 9 a; l = 180 h i ar v a = 1.25 v r typ.; f = 10 khz; repetitive 0.9 a t vj -55...+175 c t vjm 175 c t stg -55...+150 c p tot t c = 25c 95 w m d mounting torque 0.8...1.2 nm weight typical 6 g symbol conditions characteristic values typ. max. i r t vj = 25c v r = v rrm 100 a t vj = 150c v r = v rrm 0.5 ma v f i f = 15 a; t vj = 150c 1.78 v t vj = 25c 2.74 v r thjc 1.6 k/w r thch 0.25 k/w t rr i f = 1 a; -di/dt = 100 a/ s; 40 ns v r = 30 v; t vj = 25c i rm v r = 100 v; i f = 25 a; -di f /dt = 100 a/ s4.5 a t vj = 100c 008
? 2000 ixys all rights reserved 2 - 2 note: fig. 2 to fig. 6 shows typical values dsec 30-12a 200 600 1000 0 400 800 100 120 140 160 180 0.00001 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 40 80 120 0.0 0.4 0.8 1.2 v fr di f /dt v 200 600 1000 0 400 800 0 10 20 30 40 50 100 1000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 01234 0 5 10 15 20 25 30 35 40 i rm q r i f a v f -di f /dt -di f /dt a/ m s a v m c a/ m s a/ m s t rr ns t fr z thjc a/ m s s dsec 30-12a i f = 30a i f = 15a i f = 7.5a t vj = 100 c v r = 600v t vj = 100 c i f = 15a fig. 3 peak reverse current i rm versus -di f /dt fig. 2 reverse recovery charge q r versus -di f /dt fig. 1 forward current i f versus v f t vj = 100 c v r = 600v t vj = 100 c v r = 600v i f = 30a i f = 15a i f = 7.5a q r i rm fig. 4 dynamic parameters q r , i rm versus t vj fig. 5 recovery time t rr versus -di f /dt fig. 6 peak forward voltage v fr and t fr versus di f /dt i f = 30a i f = 15a i f = 7.5a t fr v fr fig. 7 transient thermal resistance junction to case constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.08512 0.0052 2 0.3277 0.0003 3 0.4211 0.0409 t vj =150 c t vj =100 c t vj = 25 c 008
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